Transistors with built-in Resistor
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
Unit: mm
(0.425)
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
(0.65) (0.65)
1.3
±0.1
■
Resistance by Part Number
•
UNR5210
•
UNR5211
•
UNR5212
•
UNR5213
•
UNR5214
•
UNR5215
•
UNR5216
•
UNR5217
•
UNR5218
•
UNR5219
•
UNR521D
•
UNR521E
•
UNR521F
•
UNR521K
•
UNR521L
•
UNR521M
•
UNR521N
•
UNR521T
•
UNR521V
•
UNR521Z
Marking symbol (R
1
)
(UN5210)
8L
47 kΩ
(UN5211)
8A
10 kΩ
(UN5212)
8B
22 kΩ
(UN5213)
8C
47 kΩ
(UN5214)
8D
10 kΩ
(UN5215)
8E
10 kΩ
(UN5216)
8F
4.7 kΩ
(UN5117)
8H
22 kΩ
(UN5218)
8I
0.51 kΩ
(UN5219)
8K
1 kΩ
(UN521D)
8M
47 kΩ
(UN521E)
8N
47 kΩ
(UN521F)
8O
4.7 kΩ
(UN521K)
8P
10 kΩ
(UN521L)
8Q
4.7 kΩ
(UN521M) EL
2.2 kΩ
(UN521N)
EX
4.7 kΩ
(UN521T)
EZ
22 kΩ
(UN521V)
FD
2.2 kΩ
(UN521Z)
FF
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
2.0
±0.2
0.9
±0.1
0.9
+0.2
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R
1
B
R
2
E
0 to 0.1
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00024CED
0.2
±0.1
1