UN5214 参数 Datasheet PDF下载

UNR521x Series

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base UNR5210/5215/5216/5217

cutoff current UNR5213

(Collector

open)

UNR5212/5214/521D/

521E/521M/521N/521T

UNR521Z

UNR5211

UNR521F/521K

UNR5219

UNR5218/521L/521V

Forward

current

transfer

ratio

UNR521V

UNR5218/521K/521L

UNR5219/521D/521F

UNR5211

UNR5212/521E

UNR521Z

UNR5213/5214/521M

UNR521N/521T

UNR5210

*

/5215

*

/5216

*

/5217

*

Collector-emitter saturation voltage

UNR521V

Output voltage high-level

Output voltage low-level

UNR5213/521K

UNR521D

UNR521E

Transition frequency

Input

UNR5218

f

T

R

1

V

OH

V

OL

V

CE(sat)

I

C

=

10 mA, I

B

=

0.3 mA

I

C

=

10 mA, I

B

=

1.5 mA

V

CC

=

5 V, V

B

=

0.5 V, R

L

=

1 kΩ

V

CC

=

5 V, V

B

=

2.5 V, R

L

=

1 kΩ

V

CC

=

5 V, V

B

=

3.5 V, R

L

=

1 kΩ

V

CC

=

5 V, V

B

=

10 V, R

L

=

1 kΩ

V

CC

=

5 V, V

B

=

6.0 V, R

L

=

1 kΩ

V

CB

=

10 V, I

E

= −2

mA, f

=

200 MHz

−30%

150

0.51

1.0

2.2

4.7

10

22

47

+30%

MHz

kΩ

4.9

0.2

V

V

h

FE

V

CE

=

10 V, I

C

=

5 mA

6

20

30

35

60

60

80

80

160

400

460

0.25

V

200

0.4

0.5

1.0

1.5

2.0

20



Symbol

V

CBO

V

CEO

I

CBO

I

CEO

I

EBO

Conditions

I

C

=

10

µA,

I

E

=

0

I

C

=

2 mA, I

B

=

0

V

CB

=

50 V, I

E

=

0

V

CE

=

50 V, I

B

=

0

V

EB

=

6 V, I

C

=

0

Min

50

50

0.1

0.5

0.01

0.1

0.2

mA

Typ

Max

Unit

V

V

µA

resistance UNR5219

UNR521M/521V

UNR5216/521F/521L/521N

UNR521Z

UNR5211/5214/5215/521K

UNR5212/5217/521T

UNR5210/5213/521D/521E

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE

Q

160 to 260

R

210 to 340

S

290 to 460

No-rank

160 to 460

2

SJH00024CED