Philips Semiconductors
Product specification
UHF power transistor
BLV2047
handbook, halfpage
10
MBK400
Gp
Gp
50
η
C
handbook, halfpage
0
MBK401
d3
(dB)
8
(%)
40
(dBc)
−10
η
C
6
30
−20
(1)
(2)
4
20
−30
(3)
2
10
−40
0
0
20
40
60
0
80
100
PL (PEP)(W)
−50
0
20
40
60
80
PL (PEP)(W)
V
CE
= 26 V; I
CQ
= 300 mA; f
1
= 2000 MHz; f
2
= 2000.1 MHz.
V
CE
= 26 V; f
1
= 2000 MHz; f
2
= 2000.1 MHz.
(1) I
CQ
= 100 mA.
(2) I
CQ
= 300 mA.
(3) I
CQ
= 500 mA.
Fig.6
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
Fig.7
Intermodulation products as a function of
peak envelope load power; typical values.
handbook, halfpage
0
MBK402
handbook, halfpage
0
MBK925
dim
(dBc)
−20
d3
d5
−40
d7
ACP
(dBc)
−20
−40
−60
0
20
40
60
80
PL (PEP)(W)
−60
0
4
8
12
16
20
PL (W)
V
CE
= 26 V; I
CQ
= 300 mA; f
1
= 2000 MHz; f
2
= 2000.1 MHz.
V
CE
= 26 V; I
CQ
= 500 mA.
Measured at 885 kHz offset with 30 kHz bandwidth.
CDMA test signal with 11.9 dB peak to average ratio.
Fig.8
Intermodulation products as a function of
peak envelope load power; typical values.
Fig.9
Adjacent channel power as a function of
load power; typical values.
1999 Jun 09
5
PHILIPS [ NXP SEMICONDUCTORS ]
