2SK1405
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
600
V
V
±30
15
A
*1
Drain peak current
ID(pulse)
60
15
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
A
60
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
600
±30
—
Typ
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *3
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
—
—
—
V
—
±10
250
3.0
0.50
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
0.35
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
9
14
3150
780
110
35
—
—
—
—
—
—
—
—
—
—
S
ID = 8 A, VDS = 10 V *3
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
120
240
100
1.0
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward voltage
VDF
trr
IF = 15 A, VGS = 0
Body to drain diode reverse recovery
time
140
ns
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.3.00 May 15, 2006 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
