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2SK1775 参数 Datasheet PDF下载

2SK1775图片预览
型号: 2SK1775
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1775
Main Characteristics
Power vs. Temperature Derating
90
50
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
10
3
1
0.3
0.1
0.05
30
µ
s
is
o n )
n a
(
tio re
DS
10
ra s a y R
0
PW
µ
s
pe thi d b
1
O n e
=
D
m
t
i i
C
10
s
lim
O
m
pe
s
ra
(1
tio
Sh
n
ot
(T
)
c
=
25
°
C
)
10
Ta = 25°C
1
3
10
30
100
300
1000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
6V
5V
6
Pulse Test
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
V
DS
= 20 V
Pulse Test
6
4
4.5 V
4
75°C
T
C
= 25°C
2
V
GS
= 4 V
2
–25°C
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I
D
= 10 A
12
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
V
GS
= 10 V
2
1
0.5
0.2
0.1
0.05
0.2
Pulse Test
15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
8
5A
4
2A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0
4
8
12
16
20
0.5
1.0
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6