2SK1775
Static Drain to Source on State
Resistance vs. Temperature
5
V
GS
= 10 V
Pulse Test
5A
I
D
= 10 A
2
2A
1
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
4
3
2
1
0.5
0.2
0.1
0.05
0
–40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
10,000
di/dt = 100 A/µs,
Ta = 25°C, V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time t rr (ns)
2,000
1,000
500
Capacitance C (pF)
Ciss
1,000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
200
100
50
0.1
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1,000
V
DD
= 600 V
800
400 V
250 V
600
V
DS
V
GS
12
16
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
Switching Time t (ns)
200
100
50
t
r
t
d (off)
t
f
400
600 V
400 V
V
DD
= 250 V
20
40
60
I
D
= 8 A
8
t
d (on)
20
10
5
0.1
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 5
µs,
duty < 1%
0.2
0.5
1
2
5
10
200
4
0
0
80
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
