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2SK2936 参数 Datasheet PDF下载

2SK2936图片预览
型号: 2SK2936
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管电源开关局域网
文件页数/大小: 8 页 / 121 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK2936的Datasheet PDF文件第1页浏览型号2SK2936的Datasheet PDF文件第2页浏览型号2SK2936的Datasheet PDF文件第4页浏览型号2SK2936的Datasheet PDF文件第5页浏览型号2SK2936的Datasheet PDF文件第6页浏览型号2SK2936的Datasheet PDF文件第7页浏览型号2SK2936的Datasheet PDF文件第8页  
2SK2936  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
1000  
300  
40  
30  
20  
10  
10  
100  
µ
100  
s
µ
s
30  
10  
3
1
Operation in  
this area is  
limited by R  
DS(on)  
0.3  
0.1  
Ta = 25°C  
0
3
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
10 V  
6 V  
5 V  
4 V  
50  
40  
30  
20  
10  
50  
40  
30  
20  
10  
Pulse Test  
VDS = 10 V  
Pulse Test  
3.5 V  
25°C  
Tc = 75°C  
3 V  
–25°C  
VGS = 2.5 V  
0
0
1
2
3
4
5
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
100  
50  
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
Pulse Test  
20  
10  
5
VGS = 4 V  
10 V  
ID = 20 A  
10 A  
5 A  
2
1
12  
0
4
8
16  
20  
1
2
5
10  
20  
50 100  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.4.00 Sep 07, 2005 page 3 of 7