2SK2936
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
40
Pulse Test
32
I
D
= 20 A
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
500
V
DS
= 10 V
200 Pulse Test
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
10 A
5A
24
16
5, 10, 20 A
8
10 V
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
100
10000
5000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
50
2000
1000
Ciss
Coss
500
200
100
50
20
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Crss
V
GS
= 0
f = 1 MHz
10
0.1
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 45 A
V
GS
V
DS
V
DD
= 10 V
25 V
50 V
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
100
80
16
Switching Time t (ns)
500
200
100
50
td(off)
tf
tr
td(on)
60
12
40
8
20
V
DD
= 50 V
25 V
10 V
4
0
200
20
0
40
80
120
160
10
0.1 0.2 0.5 1
V
GS
= 10 V,
V
DD
= 30 V
PW = 10
µs,
duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
