2SK3479
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
300
250
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
I
D
- Drain Current - A
V
GS
=10 V
200
150
100
50
4.5 V
10
T
A
=
−40˚C
25˚C
75˚C
150˚C
1
0.1
1
2
3
4
V
DS
= 10 V
5
6
0
Pulsed
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
16
100 V
DS
= 10 V
Pulsed
10
T
A
= 150˚C
75˚C
25˚C
−40˚C
12
I
D
= 83 A
8
42 A
1
0.1
4
0.01
0.01
0.1
1
10
100
0
5
10
15
20
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
GS(off)
- Gate Cut-off Voltage - V
40
2.5
2.0
1.5
1.0
0.5
0
−50
V
DS
= 10 V
I
D
= 1 mA
30
20
V
GS
= 4.5 V
10
10 V
1
10
100
1000
0
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D15077EJ1V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
