2SK3479
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
V
GS
= 4.5 V
10 V
10
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
GS
= 10 V
0V
15
10
5
I
D
= 42 A
−50
0
50
100
150
1
0
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
t
f
t
d(off)
100
t
d(on)
10
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
t
r
10000
C
iss
1000
C
oss
C
rss
1
10
100
100
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
160
16
V
GS
- Gate to Source Voltage - V
120
V
DD
= 80 V
50 V
20 V
12
100
80
V
GS
8
10
40
V
DS
0
50
100
150
I
D
= 83 A
200
4
1
0.1
1.0
10
100
0
250
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D15077EJ1V0DS
5
RENESAS [ RENESAS TECHNOLOGY CORP ]
