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2SK360 参数 Datasheet PDF下载

2SK360图片预览
型号: 2SK360
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N-Channel MOS FET]
分类和应用:
文件页数/大小: 6 页 / 68 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK360
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. V
GS
= –4 V
Symbol
V
DSX
*
1
V
GSS
I
D
I
G
Pch
Tch
Tstg
Ratings
20
±5
30
±1
150
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate cutoff current
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Symbol
V
(BR)DSX
I
GSS
I
DSS
*
1
V
GS(off)
|y
fs
|
Min
20
6
0
8
Typ
14
2.5
1.6
0.03
30
2.0
Max
±20
12
–2.0
Unit
V
nA
mA
V
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 100
µ
A, V
GS
= –4 V
V
GS
= ±5 V, V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
DS
= 10 V, I
D
= 10
µA
V
DS
= 10 V, V
GS
= 0,
f = 1 kHz
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DS
= 10 V, V
GS
= 0,
f = 100 MHz
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Power gain
PG
Noise figure
NF
Note: 1. The 2SK360 is grouped by I
DSS
as follows.
Grade
Mark
I
DSS
IGE
6 to 10
E
F
IGF
8 to 12
Rev.2.00, Aug 10.2005, page 2 of 5