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2SK360 参数 Datasheet PDF下载

2SK360图片预览
型号: 2SK360
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N-Channel MOS FET]
分类和应用:
文件页数/大小: 6 页 / 68 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK360
Typical Output Characteristics
10
V
GS
= 0 V
Drain Current I
D
(mA)
Maximum Channel Dissipation Curve
Channel Power Dissipation P
ch
(mW)
150
8
–0.1
–0.2
–0.3
100
6
4
50
–0.4
–0.5
–0.6
–0.7
–0.8
2
0
50
100
150
Ambient Temperature Ta (°C)
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
10
Typical Transfer Characteristics
10.0
V
DS
= 10 V
Drain Current I
D
(mA)
Forward Transfer Admittance
y
fs
(mS)
Forward Transfer Admittance vs.
Drain to Source Voltage
20
8.0
F
6.0
E
4.0
16
12
8
V
GS
= 0
f = 1 kHz
2.0
4
0
–2.0
–1.6
–1.2
–0.8
–0.4
Gate to Source Voltage V
GS
(V)
0
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance
y
fs
(mS)
Input Capacitance vs.
Drain to Source Voltage
20
Input Capacitance C
iss
(pF)
100
50
V
DS
= 10 V
f = 1 kHz
10
5
V
GS
= 0
f = 1 MHz
20
10
5
2
1.0
0.5
0.5
2
1
0.2
0.5 1.0
2
5
10
Drain Current I
D
(mA)
20
1.0
2
5
10
20
Drain to Source Voltage V
DS
(V)
Rev.2.00, Aug 10.2005, page 3 of 5