HAT2167H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
30
±20
—
—
1.0
—
—
42
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
—
±10
1
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
—
VDS = 30 V, VGS = 0
—
2.5
5.5
9.3
—
VDS = 10 V, I D = 1 mA
ID = 20 A, VGS = 10 V Note4
ID = 20 A, VGS = 4.5 V Note4
ID = 20 A, VDS = 10 V Note4
Static drain to source on state
resistance
4.2
6.1
70
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Rg
2700
620
200
0.5
17
—
pF
pF
pF
Ω
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Gate resistance
—
—
—
Total gate charge
Qg
—
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V, VGS = 4.5 V,
ID = 40 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
8
—
3.7
11
—
—
VGS = 10 V, ID = 20 A,
VDD 10 V, RL = 0.5 Ω,
Rg = 4.7 Ω
30
—
Turn-off delay time
Fall time
td(off)
tf
45
—
6
—
Body–drain diode forward voltage
VDF
0.85
30
1.10
—
IF = 40 A, VGS = 0 Note4
Body–drain diode reverse recovery
time
trr
ns
IF = 40 A, VGS = 0,
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
Rev.5.00 Sep 20, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
