HAT2167H
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
10
100
I
= 50 A
D
Pulse Test
Tc = -25°C
75°C
30
10
8
6
4
10 A, 20 A
VGS = 4.5 V
25°C
3
1
10 A, 20 A, 50 A
10 V
2
0
0.3
0.1
VDS = 10 V
Pulse Test
0.1 0.3
3
30
1
10
100
-25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
50
10000
Ciss
3000
1000
Coss
Crss
300
100
20
10
di/dt = 100 A/µs
30
10
VGS = 0
VGS = 0, Ta = 25°C
f = 1 MHz
0.1 0.3
1
3
10 30
100
0
5
10
15
20
25
30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
50
40
30
20
20
16
12
8
1000
I
D = 30 A
300
100
VGS
VDD = 25 V
10 V
5 V
t
r
t
d(off)
VDS
30
10
t
d(on)
t
f
10
0
4
0
VDD = 25 V
10 V
5 V
3
1
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.3
1
3
10
30
100
0
20
40
60
80
100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep 20, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
