RJK03E3DNS
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
40
1000
Ciss
300
100
30
V
GS
= 0
f = 1 MHz
10
20
Coss
Crss
30
I
D
= 2 A, 5 A, 10 A
20
V
GS
= 4.5 V
10
10 V
0
–25
0
25
50
2 A, 5 A, 10 A
75
100 125 150
10
0
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
V
GS
16
V
DD
= 25 V
10 V
30
V
DS
12
Reverse Drain Current vs.
Source to Drain Voltage
20
20
Reverse Drain Current I
DR
(A)
I
D
= 14 A
10 V
16
5V
Pulse Test
40
12
20
8
8
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
5
10
15
20
4
4
0
0
25
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
5
4
3
2
1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1905-0200 Rev.2.00
Apr 06, 2010
Page 4 of 6
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