欢迎访问ic37.com |
会员登录 免费注册
发布采购

RQJ0201UGDQATL-E 参数 Datasheet PDF下载

RQJ0201UGDQATL-E图片预览
型号: RQJ0201UGDQATL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道MOS场效应管电源开关 [Silicon P Channel MOS FET Power Switching]
分类和应用: 晶体开关小信号场效应晶体管电源开关光电二极管
文件页数/大小: 7 页 / 91 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第1页浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第2页浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第4页浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第5页浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第6页浏览型号RQJ0201UGDQATL-E的Datasheet PDF文件第7页  
RQJ0201UGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
–100
Operation in this area
is limited by R
DS(on)
100
µs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
–10
1
m
m
s
10
DC
0
O
m
pe
s
ra
tio
n
0.6
PW
10
s
–1
=
0.4
0.2
0
–0.1
Ta = 25°C
1 Shot Pulse
0
50
100
150
–0.01
–0.01
–0.1
–1
–10
–100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–10
–3 V
–6 V
–10 V
–2.6 V
–2.4 V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
–10
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
–2.2 V
Drain Current I
D
(A)
–8
–8
–6
–2.0 V
–6
–4
–1.8 V
–4
–2
–1.6 V
V
GS
= 0 V
–2
Tc = 75°C
0
0
–1
–25°C
25°C
–2
0
0
–2
–4
–6
–8
–10
–3
–4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
–1
V
DS
= –10 V
Pulse Test
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
Case Temperature
–1.5
V
DS
= –10 V
Pulse Test
I
D
= –10 mA
–1
Drain Current I
D
(A)
–0.1
–0.01 Tc = 75°C
25°C
–1 mA
–0.5
–0.1 mA
–0.001
–25°C
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
Rev.3.00 May 24, 2006 page 3 of 6