TT8U2
Electrical
characteristic curves
(Ta=25°C)
<MOSFET>
DataSheet
10
8
DRAIN CURRENT : -I
D
[A]
6
4
2
V
GS
=
−1.5V
0
0
0.2
0.4
0.6
0.8
1
Ta=25°C
Pulsed
V
GS
=
−4.5V
V
GS
=
−2.5V
V
GS
=
−1.8V
10
DRAIN CURRENT : -I
D
[A]
8
6
4
2
0
0
2
4
6
8
10
V
GS
=
−1.5V
Ta=25°C
V
GS
=
−4.5V
Pulsed
V
GS
=
−2.5V
V
GS
=
−1.8V
10
V
DS
=
−10V
Pulsed
DRAIN CURRENT : -I
D
[A]
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0.001
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
1000
Ta=25°C
Pulsed
V
GS
=
−1.5V
V
GS
=
−1.8V
V
GS
=
−2.5V
V
GS
=
−4.5V
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
V
GS
=
−4.5V
Pulsed
1000
V
GS
=
−2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
100
100
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
1000
V
GS
=
−1.8V
Pulsed
1000
V
GS
=
−1.5V
Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs|
[S]
10
V
DS
=
−10V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
10
0.1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
10
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