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HFD1N65 参数 Datasheet PDF下载

HFD1N65图片预览
型号: HFD1N65
PDF下载: 下载PDF文件 查看货源
内容描述: 650V N沟道MOSFET [650V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 759 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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HFD1N65 / HFU1N65
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
10
1
Figure 8. On-Resistance Variation
vs Temperature
1.0
Operation in This Area
is Limited by R
DS(on)
100
µs
0.8
I
D
, Drain Current [A]
10
0
1 ms
10 ms
DC
I
D
, Drain Current [A]
0.6
0.4
10
-1
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0.2
10
-2
10
0
10
1
10
2
10
3
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Z
θ JC
Thermal Response
(t),
10
0
0.2
0.1
0.05
0.02
0.01
single pulse
Notes :
(t)
W
1. Z
θ JC
= 4.0
℃/
Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
10
-1
P
DM
t
1
10
-2
t
2
10
0
10
-5
10
-4
10
-3
10
-1
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Apr 2006