Preliminary
SIM100D12SV1
V
CES
= 1200V
Ic = 100A
V
CE(ON)
typ. = 1.7V
@ Ic = 100A
“HALF-BRIDGE” IGBT
Features
▪Trench
gate + field stopper, using
Infineon chip design
▪
10µs Short circuit capability
▪
Low turn-off losses
▪
Short tail current for over 18KHz
▪
Positive V
CE
(on)
temperature coefficient
Applications
▪
AC & DC Motor controls
▪
VVVF inverters
▪
Optimized for high frequency inverter
Type Welding machines
▪
High frequency SMPS
▪
UPS, Robotics
Package : V1
Absolute Maximum Ratings
@ Tc = 25℃ (per leg)
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
T
SC
V
iso
T
j
T
stg
Weight
Mounting
Torque
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
V
GE
= 0V,
Condition
I
C
= 500
µA
Ratings
1200
± 20
Unit
V
V
A
A
A
A
T
C
= 80℃(25℃)
T
C
= 25℃
T
C
= 80℃(25℃)
TC=(25℃)
100(140)
200
100(140)
200
10
µs
V
℃
℃
g
Nm
Nm
AC 1 minute
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
-1-