AO4612
60V Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
10V
15
5.0V
10
I
D
(A)
4.5V
10
4.0V
5
V
GS
=3.5V
0
0
1
2
3
4
5
0
2
2.5
3
3.5
4
4.5
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
25°C
I
D
(A)
125°C
V
DS
=5V
15
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance
1.8
1.6
V
GS
=4.5V
1.4
1.2
1
0.8
I
D
=3.0A
V
GS
=10V
I
D
=4.5A
100
90
80
R
DS(ON)
(mΩ)
Ω
70
60
50
40
30
20
0
5
10
15
20
V
GS
=10V
V
GS
=4.5V
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
140
120
R
DS(ON)
(mΩ)
Ω
100
125°C
80
60
40
2
4
6
8
10
I
S
(A)
I
D
=4.5A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
25°C
125°C
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/9
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