AO4612
60V Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
8
-V
GS
(Volts)
Capacitance (pF)
V
DS
=-30V
I
D
=-3.2A
1000
800
600
400
C
oss
200
0
0
4
8
12
16
20
0
0
10
20
30
40
50
60
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
iss
6
4
2
100.0
40
T
J(Max)
=150°C
T
A
=25°C
Power (W)
R
DS(ON)
limited
30
100µs
1ms
10ms
0.1s
1s
10.0
-I
D
(Amps)
1.0
20
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
10
10s
DC
0.0
0
10
-V
DS
(Volts)
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
D
0.1
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
T
8/9
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