AON3406 参数 Datasheet PDF下载

AON3406

30V N-Channel MOSFET

General Description

The AON3406 uses advanced trench technology to provide excellent R

DS(ON)

and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

V

DS

(V) = 30V

I

D

= 10A (V

GS

= 10V)

R

DS(ON)

< 15mΩ (V

GS

= 10V)

R

DS(ON)

< 24mΩ (V

GS

= 4.5V)

D

Top View

1

2

3

4

8

7

6

5

G

S

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

A

Current

Pulsed Drain Current

B

T

A

=25°

C

Power Dissipation

A

Maximum

30

±20

10

7.8

30

3.0

1.9

-55 to 150

Units

V

V

A

V

GS

T

A

=25°

C

T

A

=70°

C

I

D

I

DM

T

A

=70°

C

P

D

T

J

, T

STG

W

°

C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

A

Maximum Junction-to-Ambient

Maximum Junction-to-Ambient

A

Maximum Junction-to-Lead

C

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJL

Typ

32

65

25

Max

42

100

35

Units

°

C/W

°

C/W

°

C/W

1/4

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