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AON3406 参数 Datasheet PDF下载

AON3406图片预览
型号: AON3406
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 656 K
品牌: FREESCALE [ Freescale ]
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AON3406  
30V N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
V
DS=24V, VGS=0V  
0.003  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
VDS=0V, VGS= ±20V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
3
nA  
V
VGS(th)  
ID(ON)  
1.4  
30  
1.75  
A
V
GS=10V, ID=10A  
12  
18  
15  
22  
24  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
V
GS=4.5V, ID=9A  
18  
mΩ  
S
VDS=5V, ID=10A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
30  
0.73  
1
4
V
Maximum Body-Diode Continuous Current  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
955  
145  
112  
0.5  
1200  
0.85  
pF  
pF  
pF  
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
Qg(4.5V) Total Gate Charge  
17  
9
24  
12  
nC  
nC  
nC  
nC  
ns  
VGS=10V, VDS=15V, ID=10A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
3.4  
4.7  
5
6.5  
7.5  
25  
6
V
GS=10V, VDS=15V, RL=1.5,  
6
ns  
RGEN=3Ω  
tD(off)  
tf  
19  
4.5  
19  
9
ns  
ns  
trr  
IF=10A, dI/dt=100A/µs  
IF=10A, dI/dt=100A/µs  
21  
12  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The  
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance  
rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA  
curve provides a single pulse rating.  
Rev2 : Nov 2009  
2 / 4  
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