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IRL3803S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
30
1.0
55
Typ.
0.052
14
230
29
35
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.006
V
GS
= 10V, I
D
= 71A
Ω
0.009
V
GS
= 4.5V, I
D
= 59A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 25V, I
D
= 71A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
V
GS
= -16V
-100
140
I
D
= 71A
41
nC
V
DS
= 24V
78
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 71A
R
G
= 1.3Ω
R
D
= 0.20Ω, See Fig. 10
Between lead,
7.5
nH
and center of die contact
5000
V
GS
= 0V
1800
pF
V
DS
= 25V
880
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
Min. Typ. Max. Units
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
140
showing the
A
G
integral reverse
470
p-n junction diode.
S
1.3
V
T
J
= 25°C, I
S
= 71A, V
GS
= 0V
120 180
ns
T
J
= 25°C, I
F
= 71A
450 680
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 180µH
R
G
= 25Ω, I
AS
= 71A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRL3803 data and test conditions.
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
I
SD
≤
71A, di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
2 / 10
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