C8051F000/1/2/5/6/7
C8051F010/1/2/5/6/7
Table 6.1. 10-Bit ADC Electrical Characteristics
VDD = 3.0V, AV+ = 3.0V, VREF = 2.40V (REFBE=0), PGA Gain = 1, -40°C to +85°C unless otherwise specified.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY
Resolution
10
bits
Integral Nonlinearity
LSB
±
�½
±
1
Differential Nonlinearity
Guaranteed Monotonic
LSB
±
�½
±
1
Offset Error
LSB
±
0.5
Full Scale Error
Differential mode
LSB
-1.5
±
0.5
Offset Temperature
±
0.25
ppm/°C
Coefficient
DYNAMIC PERFORMANCE (10kHz sine-wave input, 0 to –1dB of full scale, 100ksps)
Signal-to-Noise Plus
59
61
dB
Distortion
Total Harmonic Distortion
Up to the 5
th
harmonic
-70
dB
Spurious-Free Dynamic
80
dB
Range
CONVERSION RATE
Conversion Time in SAR
16
clocks
Clocks
SAR Clock Frequency
C8051F000, ‘F001, ‘F002
2.0
MHz
C8051F005, ‘F006, ‘F007
2.5
MHz
Track/Hold Acquisition
1.5
µs
Time
Throughput Rate
100
ksps
ANALOG INPUTS
Voltage Conversion Range
Single-ended Mode (AINn – AGND)
0
VREF
V
Differential Mode |(AINn+) – (AINm-)|
- 1LSB
Input Voltage
Any AINn pin
AGND
AV+
V
Input Capacitance
10
pF
TEMPERATURE SENSOR
Linearity
±
0.20
°C
Absolute Accuracy
±
3
°C
Gain
PGA Gain = 1
2.86
mV/°C
PGA Gain = 1
Gain Error (±1σ)
±
33.5
µV/°C
Offset
776
mV
PGA Gain = 1, Temp = 0°C
mV
Offset Error (±1σ)
PGA Gain = 1, Temp = 0°C
±
8.51
POWER SPECIFICATIONS
Power Supply Current (AV+ Operating Mode, 100ksps
450
900
µA
supplied to ADC)
Power Supply Rejection
mV/V
±
0.3
Rev. 1.7
50
SILABS [ SILICON LABORATORIES ]
