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STK15C88-NF25ITR 参数 Datasheet PDF下载

STK15C88-NF25ITR图片预览
型号: STK15C88-NF25ITR
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8 PowerStore的nvSRAM [32Kx8 PowerStore nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 403 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK15C88
Internally,
RECALL
is a two-step procedure. First,
the
SRAM
data is cleared, and second, the nonvola-
tile information is transferred into the
SRAM
cells.
After the t
RECALL
cycle time the
SRAM
will once again
be ready for
READ
and
WRITE
operations. The
RECALL
operation in no way alters the data in the
nonvolatile elements. The nonvolatile data can be
recalled an unlimited number of times.
To help avoid this situation, a 10K Ohm resistor
should be connected either between W and system
V
CC
or between E and system V
CC
.
HARDWARE PROTECT
The STK15C88 offers hardware protection against
inadvertent
STORE
operation and
SRAM WRITE
s
during low-voltage conditions. When V
CC
< V
SWITCH
,
all software
STORE
operations and
SRAM WRITE
s
are inhibited.
AutoStore
TM
OPERATION
The STK15C88 uses the intrinsic system capaci-
tance to perform an automatic
STORE
on power
down. As long as the system power supply takes at
least t
STORE
to decay from V
SWITCH
down to 3.6V, the
STK15C88 will safely and automatically store the
SRAM
data in nonvolatile elements on power down.
In order to prevent unneeded
STORE
operations,
automatic
STORE
s will be ignored unless at least
one
WRITE
operation has taken place since the
most recent
STORE
or
RECALL
cycle. Software-
initiated
STORE
cycles are performed regardless of
whether a
WRITE
operation has taken place. Addi-
tional information may be found in applications note
“Applying the STK11C88, STK15C88 and
STK16C88 32K nvSRAM.”
LOW AVERAGE ACTIVE POWER
The STK15C88 draws significantly less current
when it is cycled at times longer than 50ns. Figure 2
shows the relationship between I
CC
and
READ
cycle
time. Worst-case current consumption is shown for
both
CMOS
and
TTL
input levels (commercial tem-
perature range, V
CC
= 5.5V, 100% duty cycle on chip
enable). Figure 3 shows the same relationship for
WRITE
cycles. If the chip enable duty cycle is less
than 100%, only standby current is drawn when the
chip is disabled. The overall average current drawn
by the STK15C88 depends on the following items:
1)
CMOS
vs.
TTL
input levels; 2) the duty cycle of
chip enable; 3) the overall cycle rate for accesses;
4) the ratio of
READ
s to
WRITE
s; 5) the operating
temperature; 6) the V
CC
level; and 7) I/O loading.
POWER-UP
RECALL
During power up, or after any low-power condition
(V
CC
< V
RESET
), an internal
RECALL
request will be
latched. When V
CC
once again exceeds the sense
voltage of V
SWITCH
, a
RECALL
cycle will automatically
be initiated and will take t
RESTORE
to complete.
If the STK15C88 is in a
WRITE
state at the end of
power-up
RECALL
, the
SRAM
data will be corrupted.
100
100
Average Active Current (mA)
Average Active Current (mA)
80
80
60
60
TTL
CMOS
20
40
TTL
20
CMOS
0
50
100
150
Cycle Time (ns)
200
40
0
50
100
150
Cycle Time (ns)
200
Figure 2: I
CC
(max) Reads
Figure 3: I
CC
(max) Writes
Document Control #ML0016 Rev 2.0
Jan, 2008
9