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STN4416 参数 Datasheet PDF下载

STN4416图片预览
型号: STN4416
PDF下载: 下载PDF文件 查看货源
内容描述: STN4416是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 [STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 6 页 / 966 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN4416
N Channel Enhancement Mode MOSFET
10A
DESCRIPTION
STN4416 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
20V/10A, R
DS(ON)
= 11mΩ (Typ.)
@V
GS
= 4.5V
20V/5.6A, R
DS(ON)
= 23mΩ
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
STN4416
YA
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4416 2009. V1