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2SC5200 参数 Datasheet PDF下载

2SC5200图片预览
型号: 2SC5200
PDF下载: 下载PDF文件 查看货源
内容描述: 高功率NPN外延平面型双极晶体管 [High power NPN epitaxial planar bipolar transistor]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 8 页 / 157 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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2SC5200
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified
Table 4.
Symbol
I
CBO
I
EBO
V
(BR)CEO(1)
V
(BR)CBO
V
(BR)EBO(1)
V
CE(sat)(1)
V
BE
h
FE
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CB
= 230 V
V
EB
= 5 V
230
230
5
Min.
Typ.
Max.
5
5
Unit
µA
µA
V
Collector-emitter breakdown
I
C
= 50 mA
voltage (I
B
= 0)
Collector-base breakdown
voltage (I
E
= 0)
Emitter-base breakdown
voltage (I
C
= 0)
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
Resistive load
Turn-on time
Storage time
Fall time
I
C
= 100 µA
I
E
= 1 mA
I
C
= 8 A
I
C
= 7 A
bs
O
et
l
o
1. Pulsed: pulse duration = 300 µs, duty cycle
1.5%
ro
P
e
f
T
C
CBO
t
on
t
s
t
f
Transition frequency
Collector-base capacitance
(I
E
= 0)
uc
d
s)
t(
O
-
I
C
= 1 A
I
C
= 7 A
so
b
I
B
= 800 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
te
le
ro
P
55
35
uc
d
80
s)
t(
3
1.5
V
V
V
V
120
V
CC
= 60 V I
C
= 5A
I
B1
= -I
B2
= 0.5 A
I
C
= 1 A
V
CE
= 5 V
0.24
4.7
0.6
30
150
µs
µs
µs
MHz
pF
V
CB
= 10 V f = 1 MHz
Doc ID 16310 Rev 1
3/8