BTA16, BTB16 and T16 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
8
6
4
18
16
14
BTA
BTB / T16
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
12
10
I
T(RMS)
(A)
2
0
0
25
50
T
C
(°C)
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
I
T(RMS)
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
D
2
PAK
(S=1cm
2
)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
1E-1
T
C
(°C)
75
100
125
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
I
TM
(A)
200
100
T
j
max.
V
to
= 0.85V
R
d
= 25 m
Ω
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
180
160
140
t=20ms
T
j
= T
j
max.
120
100
T
j
= 25°C.
Non repetitive
T
j
initial=25°C
One cycle
10
80
60
40
Repetitive
T
C
=85°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
4/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
