BTA16, BTB16 and T16 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I
2
t (A
2
s)
3000
T
j
initial=25°C
dI/dt limitation:
50A/µs
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
I
TSM
1000
1.5
I
H
& I
L
1.0
I
2
t
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
B
C
SW
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
1.4
1.2
1.0
0.8
0.6
T1635/CW/BW
(dV/dt)c (V/µs)
0.4
0.1
1.0
10.0
100.0
0
0
25
50
T
j
(°C)
75
100
125
Figure 11: D
2
PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
80
70
60
50
D
2
PAK
40
30
20
10
S(cm²)
0
0
4
8
12
16
20
24
28
32
36
40
5/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
