HCC/HCF4051B/52B/53B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
VIS VEE VSS VDD
Value
25 °C
TLow
*
THigh*
Symbol
Parameter
Quiescent
Unit
(V)
(V)
(V)
(V)
Min. Max. Min. Typ. Max. Min. Max.
IL
5
5
10
20
100
20
40
80
0.04
0.04
0.04
5
10
20
150
300
600
3000
150
300
600
10
15
20
5
HCC
Types
Device
Current
0.08 100
µA
0.04
0.04
0.04
20
40
80
HCF
Types
10
15
SWITCH
ON
Resistance
0 ≤ VI
≤ VDD
5
880
310
220
880
330
230
470 1050
180 400
125 280
470 1050
180 400
125 280
10
1200
580
400
1200
520
360
HCC
Types
10
15
5
10
15
5
0
0
0
0
0
0
Ω
0 ≤ VI
≤ VDD
HCF
Types
∆ON
Resistance ∆RON
(between any 2
channels)
10
15
10
5
Ω
OFF (•) Any
Channel Channel
Leakage OFF
HCC
Types
0
0
18
100
± 0.1 100
1000
nA
All
Current
Channels
OFF
(common
OUT/IN)
Any
Channel
OFF
HCC
Types
0
0
0
0
18
15
100
300
± 0.1 100
± 0.1 300
1000
1000
nA
nA
HCF
Types
All
Channels
OFF
(common
OUT/IN)
Input
Output 4051
Output 4052
Output 4053
Feedthrough
HCF
Types
0
0
15
5
300
± 0.1 300
1000
nA
pF
C
5
30
18
9
Capaci-
tance
– 5 – 5
0.2
CONTROL (Address or Inhibit)
VIL
Input Low Voltage = VDD
VEE = VSS
RL = 1KΩ
to VSS
IIS < 2µA
(on all off
channels)
5
1.5
3
4
1.5
3
4
1.5
3
4
10
15
5
10
15
V
V
Thru
1KΩ
3.5
7
11
3.5
7
11
3.5
7
11
VIH
Input High Voltage
I , IIL
IH
Input
Leakage
Current
HCC
Types
HCF
VI = 0/18V
18
15
± 0.1
± 0.3
±10–3 ± 0.1
±10–3 ± 0.3
± 1
± 1
µA
VI = 0/15V
Types
CI
Input Capacitance Any Address or Inhibit
5
7.5
pF
Input
(•) Determined by minimum feasible leakage measurement for automatic testing.
(*) TLow = – 55°C for HCC device : – 40°C for HCF device.
(*) THigh = + 125°C for HCC device : + 85°C for HCF device.
4/17
STMICROELECTRONICS [ ST ]
