SMP50 / SMTPA / TPA
Characteristics
Figure 3.
On-state voltage versus on-state
current (typical values)
Figure 4.
Relative variation of holding
current versus junction
temperature
I
T
(A)
50
2.0
1.8
I
H
[T
j
] / I
H
[T
j
=25°C]
20
T
j
=25°C
1.6
1.4
10
1.2
1.0
5
0.8
0.6
2
0.4
V
T
(V)
1
0
1
2
3
4
5
6
7
8
9
10
0.2
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
Figure 5.
Relative variation of breakover
voltage versus junction
temperature
Figure 6.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
V
BO
[T
j
] / V
BO
[T
j
=25°C]
1.10
2000
1000
I
RM
[T
j
] / I
RM
[T
j
=25°C]
V
R
=V
RM
1.05
100
1.00
270 V
10
0.95
62 V
T
j
(°C)
0.90
-40
-20
0
20
40
60
80
100
1
25
50
T
j
(°C)
75
100
125
Figure 7.
Figure 8.
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4,
S
Cu
= 35 µm, recommended pad
layout)
2.5
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Z
th(j-a)
(°C/W)
1E+2
C[V
R
] / C[V
R
=50V]
T
j
=25°C
F=1MHz
V
RMS
=1V
2.0
SMTPA / TPA
1E+1
1.5
SMP50
1.0
1E+0
0.5
t
p
(s)
1E-1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
1
2
5
10
V
R
(V)
20
50
100
300
5/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
