Characteristics
Figure 9.
Test circuit 1 for Dynamic I
BO
and V
BO
parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 50 A
SMP50 / SMTPA / TPA
2
Ω
45
Ω
66
Ω
470
Ω
83
Ω
0.36 nF
46 µH
U
10 µF
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250
Ω
12
Ω
47
Ω
46 µH
U
60 µF
KeyTek 'System 2' generator with PN246I module
Figure 10. Test circuit 2 for I
BO
and V
BO
parameters
K
ton = 20ms
R1 = 140Ω
R2 = 240Ω
220V 50Hz
Vout
VBO
measurement
DUT
1/4
IBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
●
for Bidirectional devices = Switch K is closed
●
for Unidirectional devices = Switch K is open
V
OUT
selection:
●
Device with V
BO
> 200V
➔
V
OUT
= 250 V
RMS
, R1 = 140
Ω
●
Device with V
BO
≥
200V
➔
V
OUT
= 480 V
RMS
, R2 = 240
Ω
Figure 11. Test circuit 3 for dynamic I
H
parameters
R
Surge generator
V
BAT
= - 48 V
D.U.T
This is a GO-NOGO test which allows to confirm the holding current (I
H
) level in a
functional test circuit.
TEST PROCEDURE
1/ Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2/ Fire the D.U.T. with a surge current
➔
I
PP
= 10A, 10/1000µs.
3/ The D.U.T. will come back off-state within 50ms maximum.
6/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
