STA308
ELECTRICAL CHARACTERISTCS
(V
DD3
= 3.3V ± 0.3V; V
DD
= 2.5V ± 0.2V; T
amb
= 0 to 70 °C; unless other-
wise specified)
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Symbol
I
il
I
ih
I
OZ
V
esd
Parameter
Low Level Input no pull-up
High Level Input no pull-down
Tristate output leakage without
pullup/down
Electrostatic Protection
Test Condition
V
i
= 0V
V
i
= V
DD3
V
i
= V
DD3
Leakage < 1µA
2000
Min.
Typ.
Max.
1
2
2
Unit
µA
µA
µA
V
Note
1
1
1
2
Note 1: The leakage currents are generally very small, < 1na. The values given here are maximum after an electrostatic stress on the pin.
Note 2: Human Body Model
DC ELECTRICAL CHARACTERISTICS: 3.3V BUFFERS
Symbol
V
IL
V
IH
V
ILhyst
V
IHhyst
V
hyst
V
OL
V
OL
Parameter
Low Level Input Voltage
High Level Input Voltage
Low Level Threshold
High Level Threshold
Schmitt Trigger Hysteresis
Low Level Output
High Level Output
IoI = 100uA
Ioh = -100uA
VDD3-0.2
Input Falling
Input Rising
2.0
0.8
1.3
0.3
1.35
2.0
0.8
0.4
Test Condition
Min.
Typ.
Max.
0.8
Unit
V
V
V
V
V
V
V
DC ELECTRICAL CHARACTERISTICS: 2.5V BUFFERS
Symbol
V
ILst
V
IHst
V
ILhyst
Parameter
Low Level Input Voltage
High Level Input Voltage
Low Level Threshold
Test Condition
Schmitt input
Schmitt input
non Schmitt, Input
Falling
non Schmitt, Input
Rising
1.3
0.7*VDD
0.5*VDD
Min.
Typ.
Max.
0.26*VDD
Unit
V
V
V
V
IHhyst
High Level Threshold
0.5*VDD
2.0
V
V
hyst
V
OL
V
OH
Schmitt Trigger Hysteresis
Low Level Output
High Level Output
Note 1
Note 1
0.23*VDD
0.15*VDD
0.85*VDD
V
V
V
Notes: 1. Source/Sink current under worst-case conditions.
6/33
STMICROELECTRONICS [ STMICROELECTRONICS ]
