STM8S207xx, STM8S208xx
Electrical characteristics
10.3.5
Memory characteristics
RAM and hardware registers
Table 35.
Symbol
V
RM
RAM and hardware registers
Parameter
Data retention mode
(1)
Conditions
Halt mode (or reset)
Min
V
IT-max(2)
Unit
V
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
2. Refer to
for the value of V
IT-max
.
Flash program memory/data EEPROM memory
General conditions: T
A
= -40 to 125 °C.
Table 36.
Symbol
V
DD
Flash program memory/data EEPROM memory
Parameter
Conditions
f
CPU
≤
24 MHz
Min
(1)
Typ
2.95
Max
5.5
Unit
V
Operating voltage
(all modes, execution/write/erase)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
6
6.6
ms
t
prog
3
3
T
A
=
85 °C
T
A
=
125 ° C
T
RET
= 55° C
10 k
3.3
3.3
ms
ms
t
erase
N
RW
Erase time for 1 block (128 bytes)
Erase/write cycles
(2)
(program memory)
Erase/write cycles (data memory)
Data retention (program memory)
after 10 k erase/write cycles at
T
A
=
85 °C
cycles
300 k
20
1M
t
RET
Data retention (data memory) after 10
k erase/write cycles at T
A
=
85 °C
Data retention (data memory) after
300k erase/write cycles at
T
A
=
125 °C
T
RET
= 55° C
20
years
T
RET
= 85° C
1
I
DD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
2
mA
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
Doc ID 14733 Rev 9
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