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STP11NM80 参数 Datasheet PDF下载

STP11NM80图片预览
型号: STP11NM80
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道800 V - 0.35ヘ - 11 A - TO- 220 / FP- D2PAK - TO- 247 MDmesh⑩功率MOSFET [N-channel 800 V - 0.35 ヘ - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh⑩ Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲PC局域网
文件页数/大小: 17 页 / 467 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220/D²PAK/
TO-247
V
DS
V
GS
I
D
I
D
I
DM(2)
P
TOT
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
V
ISO
T
J
T
stg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
11
8
44
150
1.2
--
-65 to 150
800
±30
11
(1)
8
(1)
44
(1)
35
0.28
2500
Unit
TO-220FP
V
V
A
A
A
W
W/°C
V
°C
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220/D²PAK/
TO-247
Unit
TO-220FP
3.6
°C/W
°C/W
°C
R
thj-case
R
thj-a
T
l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
0.83
62.5
300
Table 4.
Symbol
I
AS
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50 V)
Value
2.5
400
Unit
A
mJ
3/17