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A3K-L67142L-45 参数 Datasheet PDF下载

A3K-L67142L-45图片预览
型号: A3K-L67142L-45
PDF下载: 下载PDF文件 查看货源
内容描述: [Dual-Port SRAM, 2KX8, 45ns, CMOS, PDIP48, 0.600 INCH, PLASTIC, DIP-48]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 14 页 / 178 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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L67132/L67142
Timing Waveform of Write Cycle n
o
1, R/W Controlled Timing
(32, 33, 34, 38)
Timing Waveform of Write Cycle n
o
2, CS Controlled Timing
(32, 33, 34, 36)
Notes :
R/W must be high during all address transitions.
A write occurs during the overlap (t
SW
or t
WP
) of a low CS and a low R/W.
t
WR
is measured from the earlier of CS or R/W going high to the end of write cycle.
During this period, the I/O pins are in the output state, and input signals must not be applied.
If the CS low transition occurs simultaneously with or after the R/W low transition, the outputs remain in the high
impedance state.
37. Transition is measured
±
500 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled
and not 100 % tested.
38. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
)
to allow the I/O drivers to turn off and data to be placed on the bus for the required t
DW
. If OE is high during an R/W
controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t
WP
.
39. To access RAM, CS = VIL.
32.
33.
34.
35.
36.
MATRA MHS
Rev. D (19 Fev. 97)
9