SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
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ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
ISS
C
OSS
C
RSS
Q
g
Q
gd
Q
gs
Q
g(th)
Q
OSS
t
d(on)
t
r
t
d(off)
t
f
V
SD
Q
rr
t
rr
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
I
S
= –10A, V
GS
= 0V
V
DD
= –12.5V, I
F
= –10A,
di/dt = 300A/ms
V
DS
= –10V, V
GS
= –4.5V,
I
D
= –10A , R
G
= 5.1Ω
V
DS
= –10V, V
GS
= 0V
V
DS
= –10V, I
D
= –10A
V
GS
= 0V, V
DS
= –10V,
f = 1MHz
V
GS
= 0V, I
D
= –250mA
V
GS
= 0V, V
DS
= –20V to –16V
V
DS
= 0V, V
GS
= ±12V
V
DS
= V
GS
, I
D
= –250mA
V
GS
= –2.5V, I
D
= –10A
V
GS
= –4.5V, I
D
= –10A
V
DS
= –15V, I
D
= –10A
–0.6
–0.85
13.5
8.8
43
1070
560
180
8.8
2.1
2.1
0.9
8.2
8.1
3.9
13.5
12.6
–0.7
17.4
21
–1
1400
730
230
12.3
–20
–1
–100
–1.2
18.2
11.7
V
mA
nA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
V
nC
ns
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Dynamic Characteristics
Diode Characteristics
THERMAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
PARAMETER
R
qJC
R
qJA
(1)
(2)
Thermal Resistance Junction to Case
(1) (2)
(2)
MIN
TYP
MAX
2.8
57
UNIT
°C/W
°C/W
Thermal Resistance Junction to Ambient
(1)
R
qJC
is determined with the device mounted on a 1 inch
2
Cu (2 oz.) pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R
qJC
is specified
by design while R
qJA
is determined by the user’s board design.
Device mounted on FR4 Material with 1 inch
2
of Cu (2 oz.).
2
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