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SLVS412D – DECEMBER 2001 – REVISED FEBRUARY 2007
ELECTRICAL CHARACTERISTICS (continued)
T
J
= –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
ERROR AMPLIFIER
Error amplifier open loop voltage gain
Error amplifier unity gain bandwidth
Error amplifier common-mode input voltage range
I
IB
V
O
Input bias current, VSENSE
Output voltage slew rate (symmetric), COMP
1 kΩ COMP to AGND
(4)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
90
AGND
(4)
3
0
110
5
VBIAS
60
250
dB
MHz
V
nA
V/µs
Parallel 10 kΩ, 160 pF COMP to
Powered by internal LDO
(4)
VSENSE = V
ref
1
1.4
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage,
Falling edge deglitch,
SS/ENA
(4)
SS/ENA
(4)
2.6
SS/ENA = 0 V
SS/ENA = 0.2 V, V
I
= 2.7 V
VSENSE falling
3
1.5
0.82
1.20
0.03
2.5
3.35
5
2.3
4.1
8
4
1.40
V
V
µs
ms
µA
mA
10 mV overdrive
(4)
70
85
ns
Internal slow-start time
Charge current, SS/ENA
Discharge current, SS/ENA
POWER GOOD
Power good threshold voltage
Power good hysteresis voltage
(4)
Power good falling edge deglitch
(4)
Output saturation voltage, PWRGD
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Current limit leading edge blanking time
(4)
Current limit total response time
(4)
THERMAL SHUTDOWN
Thermal shutdown trip point
(4)
Thermal shutdown hysteresis
(4)
OUTPUT POWER MOSFETS
r
DS(on)
Power MOSFET switches
I
O
= 3 A, VI = 6 V
I
O
= 3 A, VI = 3 V
(5)
(5)
90
3
35
%V
ref
%V
ref
µs
0.30
1
V
µA
I
(sink)
= 2.5 mA
V
I
= 5.5 V
V
I
= 3 V, output shorted
(4)
V
I
= 6 V, output shorted
(4)
4
4.5
0.18
6.5
7.5
100
200
A
ns
ns
°C
°C
135
150
10
165
59
85
88
136
mΩ
(4)
(5)
Specified by design
Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design.
4
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