SLLS372E
–
MARCH 2000
–
REVISED NOVEMBER 2011
ELECTRICAL CHARACTERISTICS
over recommended ranges of operating free-air temperature and supply voltage (unless otherwise noted)
PARAMETER
TTL/LVCMOS
V
OH
High-level output voltage
USB data lines
TTL/LVCMOS
V
OL
Low-level output voltage
USB data lines
TTL/LVCMOS
Single-ended
TTL/LVCMOS
Single-ended
TTL/LVCMOS
Single-ended
TTL/LVCMOS
USB data lines
TTL/LVCMOS
TTL/LVCMOS
USB data lines
USB data lines
0.8 V
≤
V
ICR
≤
2.5 V
V = V
CC
or GND
(2)
0 V
≤
V
O
≤
V
CC
V
I
= GND
V
I
= V
CC
Static V
OH
or V
OL
0.8 V
≤
V
ICR
≤
2.5 V
Normal operation
Suspend mode
7.1
0.2
40
1
0.8 V
≤
V
ICR
≤
2.5 V
0.8 V
≤
V
ICR
≤
2.5 V
0.8
1
0.3
300
0.7
500
±10
±10
–1
1
19.9
TEST CONDITIONS
I
OH
=
–4
mA
R
(DRV)
= 15 kΩ to GND
I
OH
=
–12
mA (without R
(DRV)
)
I
OL
= 4 mA
R
(DRV)
= 1.5 kΩ to 3.6 V
I
OL
= 12 mA (without R
(DRV)
)
MIN
V
CC
–
0.5
2.8
V
CC
–
0.5
0.5
0.3
0.5
1.8
1.8
V
V
mV
μA
μA
μA
Ω
V
mA
μA
V
V
MAX
UNIT
V
IT+
V
IT–
V
hys
I
OZ
I
IL
I
IH
z
0(DRV)
V
ID
I
CC
(1)
(2)
Positive input threshold
Negative-input threshold
Input hysteresis
(1)
(V
T+
–
V
T–
)
High-impedance output current
Low-level input current
High-level input current
Driver output impedance
Differential input voltage
Input supply current
Applies for input buffers with hysteresis.
Applies for open drain buffers.
DIFFERENTIAL DRIVER SWITCHING CHARACTERISTICS
Full Speed Mode
over recommended ranges of operating free-air temperature and supply voltage, C
L
= 50 pF (unless otherwise noted)
PARAMETER
t
r
t
f
t
(RFM)
V
O(CRS)
(1)
Transition rise time for DP or DM
Transition fall time for DP or DM
Rise/fall time matching
(1)
Signal crossover output voltage
(1)
TEST CONDITIONS
See
and
See
and
(t
r
/t
f
)
×
100
MIN
4
4
90
1.3
MAX
20
20
110
2.0
UNIT
ns
ns
%
V
Characterized only. Limits are approved by design and are not production tested.
DIFFERENTIAL DRIVER SWITCHING CHARACTERISTICS
Low Speed Mode
over recommended ranges of operating free-air temperature and supply voltage, C
L
= 50 pF (unless otherwise noted)
PARAMETER
t
r
t
f
t
(RFM)
V
O(CRS)
(1)
Transition rise time for DP or DM
Rise/fall time matching
(1)
(1)
TEST CONDITIONS
C
L
= 200 pF to 600 pF,
C
L
= 200 pF to 600 pF,
(t
r
/t
f
)
×
100
C
L
= 200 pF to 600 pF
See
and
See
and
MIN
75
75
80
1.3
MAX
300
300
120
2.0
UNIT
ns
ns
%
V
Transition fall time for DP or DM
(1)
Signal crossover output voltage
(1)
Characterized only. Limits are approved by design and are not production tested.
6
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2000–2011, Texas Instruments Incorporated
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