UCC28019
www.ti.com
SLUS755–APRIL 2007
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted, VCC = 15 VDC, 0.1 µF from VCC to GND, -40°C ≤ TJ = TA ≤ 125°C. All voltages are with respect to
GND. Currents are positive into and negative out of the specified terminal.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Current Loop
gmi
Transconductance gain
Output linear range
TA = 25°C
0.75
0.95
1.15
mS
µA
V
±50
4.0
ICOMP voltage during OLP
VSENSE = 0.5 V
3.7
4.3
Voltage Loop
VREF
Reference voltage
-40°C ≤ TA ≤ 125°C
4.90
31.5
5.00
42
5.10
52.5
V
gmv
Transconductance gain
µS
Maximum sink current under normal
operation
VSENSE = 6 V, VCOMP = 4 V
21
30
38
Source current under soft start
VSENSE = 4 V, VCOMP = 0 V
VSENSE = 4 V, VCOMP = 0 V
VSENSE = 4 V, VCOMP = 4 V
–21
–100
–60
-30
–170
–100
-38
–250
–140
µA
Maximum source current under EDR
operation
Enhanced dynamic response, VSENSE
low threshold, falling
4.63
4.75
4.87
V
VSENSE input bias current
VCOMP voltage during OLP
1 V ≤ VSENSE ≤ 5 V
100
0.2
250
0.4
nA
V
VSENSE = 0.5 V, IVCOMP = 0.5 mA
0
GATE Driver
GATE current, peak, sinking(1)
GATE current, peak, sourcing(1)
GATE rise time
CGATE = 4.7 nF
2.0
–1.5
40
A
CGATE = 4.7 nF
CGATE = 4.7 nF, GATE = 2 V to 8 V
CGATE = 4.7 nF, GATE = 8 V to 2 V
GATE = 0 A
60
40
ns
GATE fall time
25
GATE low voltage, no load
GATE low voltage, sinking
GATE low voltage, sourcing
GATE low voltage, sinking
GATE low voltage, sinking
GATE high voltage
0
0.05
0.8
GATE = 20 mA
0.3
GATE = -20 mA
–0.3
0.75
0.9
–0.8
1.2
VCC = 5 V, GATE = 5 mA
VCC = 5 V, GATE = 20 mA
VCC = 20 V, CGATE = 4.7 nF
VCC = 11 V, CGATE = 4.7 nF
0.2
0.2
11
V
1.5
12.5
10.5
14
GATE high voltage
9.5
11.0
VCC = VCCOFF + 0.2 V,
CGATE = 4.7 nF
GATE high voltage
8.0
9.0
10.2
(1) Not tested. Characterized by design.
4
Submit Documentation Feedback
TI [ TEXAS INSTRUMENTS ]
