TE
T66H0004A
tmCH
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS
(1) Segment Driver Application
(Vss = 0V, Ta=-30 to +850C)
Characteristic
Operating Voltage 1
Symbol
VDD
Test Condition
Min.
2.7
Typ.
Max.
5.5
Unit
-
-
-
-
VLCD
VIH
VIN = VDD –VEE
-
6
28
V
Input voltage (1)
Output voltage (2)
0.8VDD
VDD
VI L
VOH
-
0
-
-
0.2 VDD
IOH = -0.4mA
VDD-0.4
-
V
VOL
IIL1
IIL2
IOL = 0.4mA
VIN = VDD to Vss
VIN = VDD to VEE
ION = 100uA
-
-
-
-
0.4
10
25
4
Input leakage current 1 (1)
Input leakage current 2 (3)
On resistance (4)
-10
-25
-
uA
KOhm
RON
2
FCL1 =32 KHz
ISTBY
Vss pin
-
-
50
uA
M=Vss
VDD= 5V
VDD = 3V
-
-
-
-
5
2
Supply current (5)
IDD
mA
uA
F
CL1 = 32KHz
FM = 80Hz
IEE
VDD =5V
-
-
500
NOTES:
1. Applied to Cl1,CL2,ELB,ERB,D1_SID-D4_DR,SHL,DISPOFFB,M,CS,AMS pin
2. ELB,ERB pin
3. V0,V12,V43,V5 pin
4. VLCD = VDD -VEE, V0=VDD =5V, V5=VEE=-23V
V12 = VDD -2/n(VLCD), V43= VEE +2/n(VLCD), n=17(1/256 duty,1/17 bias)
5. V0= VDD, V12=1.71V(VDD =5V) or –0.06V(VDD =3V)
V43=-19.71V(VDD =5V) or –19.94V(VDD =3V), V5=VEE=-23V, no-load condition (1/256 duty,1/17 bias)
4-bit parallel interface mode.
Istby: VDD =5V, CL2=Vss, SHL=Vss, DISPOFFB= VDD, M = Vss, display data pattern=0000
I
DD: VDD =3V, fCL2=4MHz, display data pattern=0101
VDD = 5V, fCL2 fCL2=5.12MHz, display data pattern=0101
IEE: VDD=5V, fCL2=5.12MHz, display data pattern=0101, VEE pin
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 12
Publication Date: MAR. 2004
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
