■ Electrical Characteristics
Drain Current vs. Drain /Source Voltage
30
25
5V
4V
3V
Pulse Test, Ta=25:
30
25
Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V
Drain Current:Id (A)
20
2A
15
10
5
0
0
1
Vgs＝1V
2
3
1.5V
Drain Current:Id (A)
2.5V
20
15
Topr＝25 ℃
10
5
125 ℃
0
0
1
2
3
-55 ℃
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
0.05
Pulse Test, Ta=25:
0.1
Drain/Source On-State Resistance
vs. Drain Current
Pulse Test, Ta=25˚C
Drain /Source On-State Resistance
:Rds (on) (Ω)
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.04
u
Vgs＝1.5V
0.03
Id＝5A
0.02
10V
2.5V
4.5V
0.01
0.01
0
0
2
4
6
8
0
5
10
15
20
25
30
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
0.05
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
1
Vds=10V, Id=1mA
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.04
Id＝10A
0.03
Vgs＝1.5V
5A
0.02
2.5V
0.01
4.5A
0
-60
-30
0
30
60
90
120
150
5A,10A
10A
5A
0.5
0
-0.5
-1
-60
-30
0
30
60
90
120
150
Ambient Temperature:Topr (:)
Ambient Temperature:Topr (:)
347
TOREX [ TOREX SEMICONDUCTOR ]
