XP131A0616SR
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
10000
Vgs=0V, f=1MHz
Power MOSFET
Switching Time vs. Drain Current
1000
Vgs=5V, Vdd≒10V, PW=10µsec. duty≦1%
Capacitance:Ciss, Coss, Crss (pF)
Ciss
1000
Coss
Switching Time:t (ns)
tf
100
td
（off）
Crss
tr
100
0
5
10
15
20
10
td
（on）
0.1
1
10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
5
Vds=10V, Id=10A
Reverse Drain Current vs. Source/Drain Voltage
30
25
Vgs＝4.5V
20
15
1.5V
10
5
0
0,-4.5V
2.5V
Pulse Test
Gate/Source Voltage:Vgs (V)
u
4
3
2
1
0
0
10
20
30
40
50
Reverse Drain Current:Id (A)
0
0.2
0.4
0.6
0.8
1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
348
TOREX [ TOREX SEMICONDUCTOR ]
