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TC74HC132AP 参数 Datasheet PDF下载

TC74HC132AP图片预览
型号: TC74HC132AP
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入施密特与非门 [Quad 2-Input Schmitt NAND Gate]
分类和应用: 栅极触发器逻辑集成电路光电二极管
文件页数/大小: 8 页 / 268 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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TC74HC132AP/AF/AFN
IEC Logic Symbol
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
System Diagram, Waveform
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7
−0.5
to V
CC
+
0.5
−0.5
to V
CC
+
0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP)
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW.
2
2007-10-01