TK10P60W
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.5 mA
V
GS
= 10 V, I
D
= 4.9 A
Min
600
2.7
Typ.
0.327
Max
±1
10
3.7
0.43
Ω
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
V
DD
= 0 to 400 V, I
D
= 4.9 A
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 1 MHz
Min
50
Typ.
700
2.3
20
35
7.5
22
45
5.5
75
Max
V/ns
Ω
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
25
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 9.7 A
Min
Typ.
20
4.5
9.5
Max
Unit
nC
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
I
DR
= 4.9 A, V
GS
= 0 V, V
DD
= 400 V
Test Condition
I
DR
= 9.7 A, V
GS
= 0 V
I
DR
= 4.9 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
15
Typ.
250
2.2
19
Max
-1.7
Unit
V
ns
µC
A
V/ns
3
2012-08-27
Rev.2.0
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
