QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Absolute Maximum Ratings2
Parameter
Rating
Units
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, ID
225
-8 to +2
9
V
V
A
1
Gate Current Range, IG
19.2
mA
W
Power Dissipation, CW, PDISS
74
RF Input Power at 1.6 GHz, CW, 50ꢁΩ, T = 25ꢀ°C
Channel Temperature, TCH
+39
dBm
°C
°C
°C
275
320ꢁ
Mounting Temperature (30ꢀSeconds)
Storage Temperature
−65 to +150
Notes:
1. At Channel temperature of 200°C.
2. Operation of this device outside the parameter ranges given above may cause permanent damage.
Recommended Operating Conditions1
Parameter
Min
−40
–
Typ
+25
+65
240
1.7
−2.8
–
Max
+85
+70
–
Units
ꢁ°C
V
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
Drain Current, ID
–
mA
A
–
–
4
Gate Voltage, VG
–
–
V
Channel Temperature (TCH
Power Dissipation, CW (PD)2
Power Dissipation, Pulsed (PD)2, 3
)
–
250
67.0
120.0
°C
W
–
–
–
–
W
Notes:
1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Back plane of package at 85 °C
3. Pulse Width = 100 us, Duty Cycle = 10%
4. To be adjusted to desired IDQ
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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