QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
RF Characterization – 1.2 – 1.9 GHz EVB Performance At 1.6 GHz1
Parameter
Linear Gain, GLIN
Min
Typ
16.6
51.9
55.3
13.6
Max
Units
ꢁdB
–
–
–
–
–
–
–
–
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
dBm
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +65ꢁV, IDQ = 240ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 10%
RF Characterization – Mismatch Ruggedness at 1.6 GHz1,2
Symbol Parameter
dB Compression
Typical
VSWR
Notes:
Impedance Mismatch Ruggedness
3
ꢁ10:1
1- Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 240 mA
2- Driving input power is determined at pulsed compression under matched condition at EVB output connector.
Rev. A
Disclaimer: Subject to change without notice
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