TSM2323
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
39 @ V
GS
= -4.5V
-20
52 @ V
GS
= -2.5V
68 @ V
GS
= -1.8V
I
D
(A)
-4.7
-4.1
-2.0
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
P-Channel MOSFET
Ordering Information
Part No.
TSM2323CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
-20
±8
-4.7
-20
-1.0
1.25
0.8
+150
- 55 to +150
Unit
V
V
A
A
A
W
o
o
Ta = 25 C
Ta = 70 C
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RӨ
JC
RӨ
JA
Limit
75
250
Unit
o
o
C/W
C/W
1/6
Version: A07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
