TSM2323
20V P-Channel MOSFET
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= - 250uA
V
DS
= V
GS
, I
D
= - 250uA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
≤-5V,
V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -4.7A
V
GS
= -2.5V, I
D
= -4.1A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= - 5V, I
D
= - 4.7A
I
S
= - 1.0A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
-20
-0.4
--
--
-20
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
31
41
54
16
- 0.7
12.5
1.7
3.3
1020
191
140
25
43
71
48
Max
--
-1.0
-1.0
±100
--
39
52
68
--
-1.2
19
--
--
--
--
--
40
65
110
75
Unit
V
V
uA
nA
A
mΩ
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
C
V
DS
= -10V, I
D
= -4.7A,
V
GS
= -4.5V
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -10V, R
L
= 10Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
nS
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
